Title :
The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2 nm) nitrided gate oxide
Author :
Hook, Terence B. ; Kontra, Richard ; Burnham, J. ; Lavoie, Mark
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
Abstract :
Fluorine is introduced into the PFET and NFET of a triple-oxide (1.6/2.2/5.2 nm) 90 nm nitrided-oxide CMOS technology. While the effects on the PFET gate oxide are relatively subtle, the NFET is very significantly affected. The effective thickness of the oxide increases by 0.5 nm, much of the nitrogen is removed, and the structural integrity of the film is compromised. Electrical data, SIMS, TEM, and HRTEM analysis are used to characterize the films.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; fluorine; integrated circuit reliability; nitridation; oxidation; plasma materials processing; secondary ion mass spectra; transmission electron microscopy; 1.6 to 5.2 nm; 90 nm; HRTEM; NFET; PFET; SIMS; Si-SiO2; Si-SiON:F; TEM; advanced CMOS process; effective oxide thickness increase; electrical data; fluorine effect; nitrogen removal; remote plasma nitridation; structural integrity; triple nitrided gate oxide; Boron; CMOS process; CMOS technology; Hot carriers; Implants; Microelectronics; Negative bias temperature instability; Nitrogen; Threshold voltage; Transmission electron microscopy;
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
DOI :
10.1109/PPID.2003.1200945
