The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2 nm) nitrided gate oxide

Author

Hook, Terence B. ; Kontra, Richard ; Burnham, J. ; Lavoie, Mark

Author_Institution

IBM Microeletronics, Essex Junction, VT, USA

fYear

2003

fDate

24-25 April 2003

Firstpage

150

Lastpage

153

Abstract

Fluorine is introduced into the PFET and NFET of a triple-oxide (1.6/2.2/5.2 nm) 90 nm nitrided-oxide CMOS technology. While the effects on the PFET gate oxide are relatively subtle, the NFET is very significantly affected. The effective thickness of the oxide increases by 0.5 nm, much of the nitrogen is removed, and the structural integrity of the film is compromised. Electrical data, SIMS, TEM, and HRTEM analysis are used to characterize the films.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; fluorine; integrated circuit reliability; nitridation; oxidation; plasma materials processing; secondary ion mass spectra; transmission electron microscopy; 1.6 to 5.2 nm; 90 nm; HRTEM; NFET; PFET; SIMS; Si-SiO₂; Si-SiON:F; TEM; advanced CMOS process; effective oxide thickness increase; electrical data; fluorine effect; nitrogen removal; remote plasma nitridation; structural integrity; triple nitrided gate oxide; Boron; CMOS process; CMOS technology; Hot carriers; Implants; Microelectronics; Negative bias temperature instability; Nitrogen; Threshold voltage; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2003 8th International Symposium

Print_ISBN

0-7803-7747-8

Type

conf

DOI

10.1109/PPID.2003.1200945

Filename

1200945