Title :
On-Chip ESD Protection Strategies for RF Circuits in CMOS Technology
Author :
Ker, Ming-Dou ; Hsiao, Yuan-Wen
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed
Keywords :
CMOS integrated circuits; electrostatic discharge; radiofrequency integrated circuits; CMOS technology; RF IC; broadband CMOS RF circuits; electrostatic discharge protection circuit; narrow band CMOS RF circuits; on-chip ESD protection circuit; on-chip ESD protection strategies; CMOS technology; Degradation; Electrostatic discharge; Impedance matching; Narrowband; Noise figure; Parasitic capacitance; Protection; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306371
