High-temperature performance characterization of buck converter using SiC and Si devices

There is an increasing need for power electronic devices well beyond the military requirement of 400 K. The current More Electric Initiative demands high temperature and high power electronic circuits for use in power management and distribution in advanced aircraft systems. In an attempt to develop electronic power devices for high temperature applications, silicon carbide (SiC) Schottky diodes and MOSFETs were investigated in the temperature range of 300 K to 600 K. In order to compare the advantages of enhanced SiC devices performance over silicon (Si) devices, the on-resistance of silicon carbide and silicon Si power MOSFETs were measured as a function of temperature. Expressions for the conduction losses in a MOSFET and a diode as a function of temperature for a PWM buck DC-DC converter. Power losses are compared for SiC and Si MOSFETs and diodes in the buck converter