Title :
Low charging damage SiO2 etching with a low-angle forward reflected neutral beam
Author :
Lee, D.H. ; Chung, M.J. ; Jung, S.J. ; Yeom, G.Y.
Author_Institution :
Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that when SiO2 was etched with the energetic reactive radical beams generated with SF6, SiO2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.
Keywords :
MOSFET; capacitance; current density; free radicals; radiation effects; semiconductor device measurement; silicon compounds; sputter etching; MNOS devices; MOS devices; SF6; SiO2; capacitance-voltage characteristics; current-voltage characteristics; energetic reactive radical beams; etch damage; etch properties; etch rates; low charging damage SiO2 etching; low-angle forward reflected neutral beam; radical beam induced damage; Capacitance-voltage characteristics; Etching; Particle beams; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Silicon; Sulfur hexafluoride;
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
DOI :
10.1109/PPID.2003.1200953
