Title :
Compact 1.8 V low-power CMOS operational amplifier cells for VLSI
Author :
de Langen, K.-J. ; Huijsing, J.H.
Author_Institution :
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Abstract :
The continuing down-scaling of CMOS processes has two consequences for the design of mixed-mode VLSI circuits. First, the supply voltage will go down from the present 5 V to 3 V and subsequently to 2 V, because the smaller dimensions result in a reduction of the breakdown voltage. Second, the circuit density possible increases. To meet the VLSI demands, compact topologies are needed that can operate on supply voltages between 1 and 2 V, depending on threshold voltages of the transistors. Existing CMOS opamps are compact but cannot operate at supply voltages below 2.5 V or otherwise have a complicated structure. The authors present a compact opamp which operates on supply voltage down to one gate-source voltage and two saturation voltages which amounts to 1.8 V. The opamp consists of two stages, an input stage and, a rail-to-rail output stage. An intermediate part contains current sources and a current mirror that sums the differential signals from the input stage and, cascodes that provide gain.
Keywords :
CMOS analogue integrated circuits; VLSI; differential amplifiers; operational amplifiers; 1.6 micron; 1.8 V; CMOS operational amplifier cells; VLSI; compact topology; low supply voltage; low-power CMOS op amp; rail-to-rail output stage; CMOS process; CMOS technology; Circuits; Impedance; Mirrors; Operational amplifiers; Paper technology; Threshold voltage; Very large scale integration; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585413