A GaAs MESFET Schottky diode barrier height reference circuit

Author

Taylor, S.S.

Author_Institution

TriQuint Semicond. Inc., Beaverton, OR, USA

fYear

1997

fDate

8-8 Feb. 1997

Firstpage

360

Lastpage

361

Abstract

This barrier height reference circuit consists of a voltage loop containing a Schottky diode voltage, V/sub d/, and the difference in voltages of an even number of Schottky diodes, /spl Delta/V. The diode difference voltage is established by operating two groups of diodes at different current densities. This circuit is, in a sense, a bandgap reference and its operation is similar to that of a conventional bandgap reference. The circuit is implemented in a low-power, ion-implanted, GaAs MESFET manufacturing process.

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky diodes; field effect analogue integrated circuits; gallium arsenide; reference circuits; GaAs; GaAs MESFET; Schottky diode; bandgap reference; barrier height reference circuit; low-power ion-implanted MESFET process; voltage loop; Differential amplifiers; Gallium arsenide; MESFET circuits; Photonic band gap; Schottky diodes; Semiconductor diodes; Semiconductor optical amplifiers; Temperature dependence; Temperature sensors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3721-2

Type

conf

DOI

10.1109/ISSCC.1997.585424

Filename

585424