A High Precision Curvature Compensated Bandgap Reference without Resistors

Author

Chen, Jianghua ; Ni, Xuewen ; Mo, Bangxian ; Wang, Zhanfei

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1748

Lastpage

1750

Abstract

This paper describes a low offset high precision curvature compensated bandgap reference in a 0.5-mum n-well CMOS technology without resistors. This bandgap reference employs an inverse function voltage transfer cell rather than conventional resistors, together with a low-noise and low-offset scheme to provide a temperature independent gain. Cascode structures are also introduced in order to improve the power supply rejection ratio (PSRR). The effective temperature coefficient of the bandgap reference is 6 ppm/degC. The variation in the output voltage of the bandgap reference is 1.2 mV when Vdd varies from 4.5 V to 5.5 V. The power dissipation is 2.5 mW at 5 V power supply

Keywords

CMOS integrated circuits; compensation; mixed analogue-digital integrated circuits; power supply circuits; reference circuits; 0.5 micron; 1.2 mV; 4.5 to 5.5 V; cascode structure; conventional resistor; effective temperature coefficient; high precision curvature compensated bandgap reference; inverse function voltage transfer cell; low-noise scheme; low-offset scheme; n-well CMOS technology; power dissipation; power supply rejection ratio; resistorless bandgap reference; temperature independent gain; CMOS technology; Circuit noise; Equations; MOSFETs; Microelectronics; Photonic band gap; Power supplies; Resistors; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306414

Filename

4098531