• DocumentCode
    3472171
  • Title

    Design of Low-Voltage Low-Dropout Regulator with Wide-Band High-PSR Characteristic

  • Author

    Shen, Liang-Guo ; Yan, Zu-Shu ; Zhang, Xing ; Zhao, Yuan-Fu ; Lu, Tie-Jun

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1751
  • Lastpage
    1753
  • Abstract
    Utilizing a novel unit-gain compensation cell (UGCC) to perform frequency compensation and power supply rejection (PSR) enhancement, a low-voltage high-PSR low-dropout regulator (LDO) is presented in this paper. The proposed UGCC, consisting of a 1 pF on-chip capacitor and six transistors, effectively overcomes the drawbacks that exist in the conventional compensation schemes by generating an internal low-frequency zero. A LDO that adopts this new structure is implemented and simulated using a standard 0.18-mum CMOS process. Simulation results show that the circuit can work properly when the supply voltage is as low as 1.2 V. The PSR over the frequency range of dc to 1 GHz is better than -40dB in all cases at 1.2 V supply voltage. The dropout voltage is 200 mV when the load current is 100mA. Therefore, it is well suited for low-voltage ripple-sensitive applications
  • Keywords
    CMOS integrated circuits; compensation; integrated circuit design; power supply circuits; voltage regulators; 0 to 1 GHz; 0.18 micron; 1 pF; 1.2 V; 100 mA; 200 mV; CMOS integrated circuit; LDO; dropout voltage; frequency compensation; load current; low-voltage low-dropout regulator; low-voltage ripple-sensitive application; on-chip capacitor; power supply rejection enhancement; transistors; unit-gain compensation cell; wide-band high-PSR characteristics; Capacitors; Circuit simulation; Filters; Low voltage; Microelectronics; Paramagnetic resonance; Radio frequency; Regulators; Stability; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306415
  • Filename
    4098532