DocumentCode :
3472327
Title :
An Improved Error Amplifier with Initial Voltage Reference
Author :
Dai, Guo-Ding ; Liu, Hong-Yan ; Lai, Xin-Quan ; Li, Bo
Author_Institution :
Inst. of Electron. CAD, Xidian Univ., Xi´´an
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
1776
Lastpage :
1778
Abstract :
An improved error amplifier with initial voltage reference for power management applications is presented in this paper. Based on the structure of LDO, a simple structured and high integration voltage regulator by optimizing the circuit topology is accomplished. The characteristics of the improved error amplifier are simulated by using Hspice and Samsung Bipolar Process BCH4 device models. It achieves that the phase margin is 66.7deg, the unit gain bandwidth is 2.1MHz, the zero frequency gain is 92.7dB, the CMRR is 145 dB, and the PSRR (f = 100Hz) is -97.6dB. It is implemented in a LDO design and has been taped-out in Samsung
Keywords :
amplifiers; network topology; power supply circuits; voltage regulators; 100 Hz; 2.1 MHz; 92.7 dB; Hspice; Samsung Bipolar Process BCH4 device model; circuit topology optimization; error amplifier; initial voltage reference; power management applications; voltage regulator; Circuit synthesis; Circuit topology; Driver circuits; Output feedback; Power amplifiers; Power supplies; Regulators; Sampling methods; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306444
Filename :
4098540
Link To Document :
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