An Improved Error Amplifier with Initial Voltage Reference

Author

Dai, Guo-Ding ; Liu, Hong-Yan ; Lai, Xin-Quan ; Li, Bo

Author_Institution

Inst. of Electron. CAD, Xidian Univ., Xi´´an

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1776

Lastpage

1778

Abstract

An improved error amplifier with initial voltage reference for power management applications is presented in this paper. Based on the structure of LDO, a simple structured and high integration voltage regulator by optimizing the circuit topology is accomplished. The characteristics of the improved error amplifier are simulated by using Hspice and Samsung Bipolar Process BCH4 device models. It achieves that the phase margin is 66.7deg, the unit gain bandwidth is 2.1MHz, the zero frequency gain is 92.7dB, the CMRR is 145 dB, and the PSRR (f = 100Hz) is -97.6dB. It is implemented in a LDO design and has been taped-out in Samsung

Keywords

amplifiers; network topology; power supply circuits; voltage regulators; 100 Hz; 2.1 MHz; 92.7 dB; Hspice; Samsung Bipolar Process BCH4 device model; circuit topology optimization; error amplifier; initial voltage reference; power management applications; voltage regulator; Circuit synthesis; Circuit topology; Driver circuits; Output feedback; Power amplifiers; Power supplies; Regulators; Sampling methods; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306444

Filename

4098540