Title :
A 500 MHz 4 Mb CMOS pipeline-burst cache SRAM with point-to-point noise reduction coding I/O
Author :
Nakamura, K. ; Takeda, K. ; Toyoshima, H. ; Noda, Kentaro ; Ohkubo, H. ; Uchida, T. ; Shimizu, T. ; Itani, T. ; Tokashiki, K. ; Kishimoto, K.
Author_Institution :
Microelectron. Res. Lab., NEC Corp., Kanagawa, Japan
Abstract :
A secondary cache SRAM is an indispensable CPU partner in a high-performance system. The main objectives are: 1) pipeline burst operation; 2) 32b 500MHz (2GB/s) I/Os, and 3) point-to-point communication with a CPU, as well as shortened latency and reduced noise and power caused by high-speed, high-bandwidth I/O operation. A pre-fetched pipeline scheme enables the cycle time for an internal memory core (I-cycle) to be extended by N times that of an external bus cycle (E-cycle). This is modified to an SRAM to achieve both 4b pipeline-burst cache operation and 500MHz I/O frequency. In this case, I-cycle time of 8ns is four times E-cycle time (2ns).
Keywords :
CMOS memory circuits; SRAM chips; cache storage; integrated circuit noise; memory architecture; pipeline processing; 2 GB/s; 32 bit; 4 Mbit; 500 MHz; CMOS; I/O frequency; cycle time; external bus cycle; high-bandwidth I/O operation; internal memory core; latency; pipeline-burst cache SRAM; point-to-point noise reduction coding I/O; pre-fetched pipeline scheme; Central Processing Unit; Decoding; Delay effects; Driver circuits; Impedance; MOSFETs; Noise reduction; Nonvolatile memory; Packaging; Random access memory;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585461