Detecting oxide quality problems using JT testing

The author demonstrates that JT testing is much more effective in detecting subtle defect problems on advanced thin gate technologies than the traditional ramped voltage tests. A comparison of the traditional ramp voltage tests and JT tests has been made relative to detecting subtle oxide defect problems. It has been found that, due to electron trapping, some types of gate oxide problems cannot be detected by using the JEDEC ramp voltage test, but, they can easily be detected by using the JEDEC JT test. A discussion of why this occurs along with several examples of different gate oxide problems is presented.<>