Title :
Digital Circuits Using SOI Four-Gate Transistor
Author :
Akarvardar, K. ; Blalock, B. ; Chen, S. ; Cristoloveanu, S. ; Gentil, P. ; Mojarradi, M.M.
Author_Institution :
IMEP, Grenoble
Abstract :
Novel G4-FET based logic-circuits (adjustable-threshold inverter, real-time reconfigurable logic gates and DRAM cell) are experimentally demonstrated. The independent action of the four gates helps minimize the required transistor count per logic function while enhancing design flexibility
Keywords :
DRAM chips; field effect transistors; logic circuits; logic gates; silicon-on-insulator; DRAM cell; G4 FET; SOI; adjustable threshold inverter; design flexibility; digital circuits; four gate transistor; logic circuits; logic function; real time reconfigurable logic gates; Digital circuits; Fabrication; Inverters; Logic circuits; Logic functions; MOSFET circuits; Random access memory; Reconfigurable logic; Silicon; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306491
