Title :
Effects of bandfilling on the threshold current of GaAs/AlGaAs multi quantum well lasers
Author :
Nagarajan, Radhakrishnan ; Kamiya, Toshio ; Kurobe, Atsushi
fDate :
Aug. 29 1988-Sept. 1 1988
Abstract :
In this paper we present an improved model for Multi Quantum Well (MQW) laser operation, carefully considering the bandfilling processes. And test its validity using experimental data for threshold current dependence on the cavity length and the number of wells.
Keywords :
optical losses; optical waveguides; semiconductor junction lasers; GaAs; GaAs-AlGaAs; III-V semiconductors; MQW lasers; interfacial recombination velocity reduction; optical gain; optical losses; quantum well lasers; spontaneous emission factor; strained-layer semiconductor lasers; superlattice buffer layers; threshold current; waveguiding;
Conference_Titel :
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/SLCON.1988.26146
