High-frequency noise in RF active CMOS mixers

Author

Heydari, Payam

Author_Institution

Dept. of EECS, Univ. of California, Irvine, CA, USA

fYear

2004

fDate

27-30 Jan. 2004

Firstpage

57

Lastpage

61

Abstract

A new analytical model for high-frequency noise in RF active CMOS mixers such as single-balanced and double-balanced architectures is presented. The analysis includes the contribution of nonwhite gate-induced noise at the output as well as the spot noise figure (NF) of the RF CMOS mixer, while accounting for the nonzero correlation between the gate-induced noise and the channel thermal noise. The noise contribution of the RF transconductor as well as the switching pair on the output noise is discussed. The analytical model predicts that the output noise and NF are both a strong function of the LO frequency at gigahertz range of frequencies. Simulation results verify the accuracy of the analytical model.

Keywords

CMOS integrated circuits; circuit simulation; integrated circuit noise; radiofrequency integrated circuits; statistical analysis; RF active CMOS mixers; RF transconductor; channel thermal noise; double-balanced architecture; high-frequency noise; nonwhite gate-induced noise; nonzero correlation; single-balanced architecture; spot noise figure; Active noise reduction; Analytical models; Capacitance; Circuit noise; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Radio frequency; Transconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific

Print_ISBN

0-7803-8175-0

Type

conf

DOI

10.1109/ASPDAC.2004.1337540

Filename

1337540