Title :
High-frequency noise in RF active CMOS mixers
Author_Institution :
Dept. of EECS, Univ. of California, Irvine, CA, USA
Abstract :
A new analytical model for high-frequency noise in RF active CMOS mixers such as single-balanced and double-balanced architectures is presented. The analysis includes the contribution of nonwhite gate-induced noise at the output as well as the spot noise figure (NF) of the RF CMOS mixer, while accounting for the nonzero correlation between the gate-induced noise and the channel thermal noise. The noise contribution of the RF transconductor as well as the switching pair on the output noise is discussed. The analytical model predicts that the output noise and NF are both a strong function of the LO frequency at gigahertz range of frequencies. Simulation results verify the accuracy of the analytical model.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit noise; radiofrequency integrated circuits; statistical analysis; RF active CMOS mixers; RF transconductor; channel thermal noise; double-balanced architecture; high-frequency noise; nonwhite gate-induced noise; nonzero correlation; single-balanced architecture; spot noise figure; Active noise reduction; Analytical models; Capacitance; Circuit noise; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Radio frequency; Transconductors;
Conference_Titel :
Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific
Print_ISBN :
0-7803-8175-0
DOI :
10.1109/ASPDAC.2004.1337540
