Title :
A 400 to 500-MHz CMOS Power Amplifier with multi-Watt output
Author :
Jeon, Jeongmin ; Kuhn, William B.
Author_Institution :
Kansas State Univ., Manhattan, KS
Abstract :
A two-stage P-band (400 MHz) CMOS multi-watt power amplifier (PA) is reported. Four identical 1.25-Watt PA cells are power-combined to generate approximately 5-Watt output. The same PA chip is used for a drive-amplifier, providing a total of 17 dB power gain. In the measurements, the two-stage five-chip PA produces 5.1-Watt with 17% PAE. The five-chip PA assembly will be merged into a 7times10 mm2 single die amplifier in a future project.
Keywords :
CMOS integrated circuits; power amplifiers; CMOS power amplifier; drive-amplifier; frequency 400 MHz to 500 MHz; multi-watt output; power 5.1 W; power gain; Bonding; CMOS process; Circuits; Costs; Impedance matching; Power amplifiers; Power generation; Power transformer insulation; Radiofrequency amplifiers; Tiles; CMOS; PA; UHF; power amplifier;
Conference_Titel :
Radio and Wireless Symposium, 2009. RWS '09. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2698-0
Electronic_ISBN :
978-1-4244-2699-7
DOI :
10.1109/RWS.2009.4957331
