Title :
Radiation Hardened 128K PDSOI CMOS Static RAM
Author :
Kai, Zhao ; Zhongli, Liu ; Fang, Yu ; Zhiqiang, Xiao ; Genshen, Hong
Author_Institution :
Inst. of Semicond., CAS, Beijing
Abstract :
A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11rad (Si)/s dose rate survivability. The circuit operates with ambient temperature from -25 to +125degC and power supply from 4.5 to 5.5V. A 28-pin dual-in-line flat pack package is used
Keywords :
CMOS memory circuits; SRAM chips; electronics packaging; radiation hardening (electronics); silicon-on-insulator; -25 to 125 C; 0.8 micron; 10 MHz; 128000 bit; 20 mA; 200 muA; 25 ns; 4.5 to 5.5 V; CMOS static RAM; dose rate survivability; dual-in-line flat pack package; radiation hardening; silicon-on-insulator; CMOS technology; Circuit simulation; Decoding; Energy consumption; Radiation hardening; Random access memory; Read-write memory; Silicon on insulator technology; Testing; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306507
