Title :
Characteristics of ZnO thin film transducers deposited by pulsed laser deposition
Author :
Verardi, P. ; Dinescu, M.
Author_Institution :
Istituto di Acustica Corbino, CNR, Rome, Italy
Abstract :
High quality ZnO thin films for BAW transducers have been deposited on silicon and sapphire substrates by pulsed laser deposition. An Nd:YAG laser (λ=1.06 μm, τFWHM=10 ns), able to deliver an output energy of 0.3 J/pulse, was used to irradiate pure Zn targets in an oxygen reactive atmosphere. Characterization of the films as obtained was conducted to establish their performance as a piezoelectric layer in transducers for BAW devices in the gigahertz range. Cross-section Scanning Electron Microscopy and X-ray diffraction studies show good crystallinity and perpendicular c-axis orientation. Insertion loss measurements, electromechanical coupling coefficient values and d33 coefficients are similar, and in some cases superior, to that obtained by more laborious techniques
Keywords :
UHF devices; X-ray diffraction; acoustic microwave devices; bulk acoustic wave devices; piezoelectric thin films; piezoelectric transducers; pulsed laser deposition; scanning electron microscopy; ultrasonic transducers; zinc compounds; 1.06 mum; 1.9 GHz; 2.9 GHz; Al2O3; BAW transducers; Nd:YAG laser; Si; Si substrate; X-ray diffraction; ZnO; ZnO thin film transducers; cross-section scanning electron microscopy; crystallinity; d33 coefficients; electromechanical coupling coefficient; film characterization; gigahertz range; insertion loss; perpendicular c-axis orientation; piezoelectric layer; pulsed laser deposition; sapphire substrate; Atmosphere; Conductive films; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Substrates; Transducers; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2940-6
DOI :
10.1109/ULTSYM.1995.495735
