DocumentCode :
34739
Title :
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- 
Gate-Stacks
Author :
Vandelli, Luca ; Larcher, Luca ; Veksler, Dekel ; Padovani, A. ; Bersuker, Gennadi ; Matthews, K.
Author_Institution :
Dipt. di Sci. e Metodi dell´Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
Volume :
61
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
2287
Lastpage :
2293
Abstract :
We propose a physical model for the fast component (<;1 s) of the positive bias temperature instability (PBTI) process in SiOx/HfO2 gate-stacks. The model is based on the electron- phonon interaction governing the trapping/emission of injected electrons at the preexisting defects in the dielectric stack. The model successfully reproduces the experimental time dependences of the VTH shift on both stress voltage and temperature. Simulations allow the extraction of the physical characteristics of the defects contributing to PBTI, which are found to match those assisting the leakage current in these stacks (i.e., oxygen vacancies).
Keywords :
electron emission; electron traps; electron-phonon interactions; hafnium compounds; leakage currents; silicon compounds; SiOx-HfO2; charge-trapping model; electron emission; electron trapping; electron-phonon interaction; high-κ gate-stacks; leakage current; positive bias temperature instability; Electron traps; Hafnium compounds; Logic gates; Stress; Transient analysis; Voltage measurement; Charge trapping; device modeling; high-κ dielectric; high-?? dielectric; positive bias temperature instability (PBTI); positive bias temperature instability (PBTI).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2323085
Filename :
6824842
Link To Document :
