DocumentCode :
347437
Title :
Study of pressure and temperature dependence of electrical properties in new intrinsic semiconducting polyacene quinone radical polymer
Author :
Yong, Fan ; Weigu, Zhang ; Qingquan, Lei
Author_Institution :
Dept. fo Electr. Mater. Eng., Harbin Univ. of Sci. & Technol., China
fYear :
1999
fDate :
1999
Firstpage :
301
Abstract :
We have synthesized several new polyacene quinone radical co-polymers first by condensation and experimentally found a kink at about 1.1 kbar on plots of log d.c. conductivity versus the square root of external pressure in a range from 0.1 to 10 kbar. we consider the possibility of the application of Mott´s T1/4 law to the higher temperature region of 290-400 K and analyse trends of change between d.c conductivity and spin concentration with mole fraction of 4,4´(hexafluoroisopropylidene diphthalic anhydride) (HFDA) (introduced to improve the stability). Plots of log dielectric constant versus the square root of pressure do not fully obey the linear relationship expected by Pohl. Here we give a reasonable explanation of these experimental results
Keywords :
electrical conductivity; materials preparation; organic semiconductors; permittivity; polymer blends; 0.1 to 10 kbar; 290 to 400 K; 4,4´(hexafluoroisopropylidene diphthalic anhydride); HFDA; condensation; dielectric constant; intrinsic semiconductor; log DC conductivity; polyacene quinone radical polymer; pressure dependence; spin concentration; temperature dependence; Conducting materials; Conductivity; Dielectric constant; Electrical resistance measurement; Extraterrestrial measurements; Paramagnetic resonance; Polymers; Powders; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1999 Annual Report Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-5414-1
Type :
conf
DOI :
10.1109/CEIDP.1999.804649
Filename :
804649
Link To Document :
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