DocumentCode
347437
Title
Study of pressure and temperature dependence of electrical properties in new intrinsic semiconducting polyacene quinone radical polymer
Author
Yong, Fan ; Weigu, Zhang ; Qingquan, Lei
Author_Institution
Dept. fo Electr. Mater. Eng., Harbin Univ. of Sci. & Technol., China
fYear
1999
fDate
1999
Firstpage
301
Abstract
We have synthesized several new polyacene quinone radical co-polymers first by condensation and experimentally found a kink at about 1.1 kbar on plots of log d.c. conductivity versus the square root of external pressure in a range from 0.1 to 10 kbar. we consider the possibility of the application of Mott´s T1/4 law to the higher temperature region of 290-400 K and analyse trends of change between d.c conductivity and spin concentration with mole fraction of 4,4´(hexafluoroisopropylidene diphthalic anhydride) (HFDA) (introduced to improve the stability). Plots of log dielectric constant versus the square root of pressure do not fully obey the linear relationship expected by Pohl. Here we give a reasonable explanation of these experimental results
Keywords
electrical conductivity; materials preparation; organic semiconductors; permittivity; polymer blends; 0.1 to 10 kbar; 290 to 400 K; 4,4´(hexafluoroisopropylidene diphthalic anhydride); HFDA; condensation; dielectric constant; intrinsic semiconductor; log DC conductivity; polyacene quinone radical polymer; pressure dependence; spin concentration; temperature dependence; Conducting materials; Conductivity; Dielectric constant; Electrical resistance measurement; Extraterrestrial measurements; Paramagnetic resonance; Polymers; Powders; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1999 Annual Report Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-5414-1
Type
conf
DOI
10.1109/CEIDP.1999.804649
Filename
804649
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