Wide-band 0.25μm CMOS passive mixer

Author

Lo, Ivy ; Wang, Xiaoyue ; Boric-Lubecke, Olga ; Hong, Yunpyo ; Song, Chenyan

Author_Institution

Dept. of EE, Univ. of Hawaii at Manoa, Honolulu, HI

fYear

2009

fDate

18-22 Jan. 2009

Firstpage

502

Lastpage

505

Abstract

This paper describes a wide-band resistive ring mixer fully integrated in 0.25 mum CMOS process. This mixer exhibits broadband RF impedance matching with return loss better than -10 dB from 2.2 to 8.3 GHz, and better than -15 dB from 3 to 6.2 GHz. The best conversion loss (CL) of 6.4 dB is achieved at 3.2 GHz. The input P1dB is better than 4 dBm, and the IIP3 is better than 11.4 dBm over the entire RF bandwidth of 2-9 GHz. Compared to other published CMOS wide-band resistive mixers, this mixer achieves the best linearity between 2 and 9 GHz. In addition, with a small gate bias a moderate CL is achieved at very low LO power levels.

Keywords

CMOS integrated circuits; mixers (circuits); passive networks; broadband RF impedance matching; conversion loss; frequency 2.2 GHz to 8.3 GHz; gate bias; power levels; return loss; wide-band CMOS passive mixer; wide-band resistive ring mixer; Bandwidth; CMOS process; Circuits; Impedance matching; Linearity; Mixers; Performance loss; Radio frequency; Threshold voltage; Wideband; CMOS passive mixer; conversion loss; near-threshold; wide-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2009. RWS '09. IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2698-0

Electronic_ISBN

978-1-4244-2699-7

Type

conf

DOI

10.1109/RWS.2009.4957398

Filename

4957398