• DocumentCode
    3474570
  • Title

    The impact of single-wafer processing on fab cycle time

  • Author

    Wood, Samuel C.

  • Author_Institution
    Graduate Sch. of Bus., Stanford Univ., CA, USA
  • fYear
    1995
  • fDate
    2-4 Oct 1995
  • Firstpage
    488
  • Lastpage
    494
  • Abstract
    Rapid thermal processing is already the convention for processes such as silicide annealing, and is being studied as an alternative for virtually every other thermal process in modern CMOS process flows. Single-wafer cleaning is also a broad area of research and development, both in industry and academia, although single-wafer cleaning is not as mature a technology as rapid thermal processing. This paper´s objective is to show how single-wafer processing can improve a fab´s throughput time. Throughput time (also called cycle time) is the length of time that passes from when a wafer enters a fab to begin processing until all wafer processing is completed and the wafer is ready for final probe. This paper only considers front-end processing
  • Keywords
    CMOS integrated circuits; economics; integrated circuit manufacture; integrated circuit technology; rapid thermal processing; surface cleaning; CMOS process flows; cycle time; fab cycle time; front-end processing; rapid thermal processing; single-wafer cleaning; single-wafer processing; throughput time; CMOS process; CMOS technology; Chemical vapor deposition; Cleaning; Costs; Furnaces; Plasma applications; Probes; Rapid thermal annealing; Rapid thermal processing; Research and development; Semiconductor device modeling; Silicides; Throughput; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Manufacturing Technology Symposium, 1995. 'Manufacturing Technologies - Present and Future', Seventeenth IEEE/CPMT International
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2996-1
  • Type

    conf

  • DOI
    10.1109/IEMT.1995.526209
  • Filename
    526209