DocumentCode
3474709
Title
Atomic scale characterization for nanoelectronic devices
Author
Tung, Chih-Hang
Author_Institution
Inst. of Microelectron., Singapore
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
2164
Lastpage
2167
Abstract
Atomic scale lattice strain measurement and chemical bonding & bandgap study are two important transmission electron microscopic (TEM) applications for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45nm metal-oxide-semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed
Keywords
MOSFET; bonds (chemical); nanoelectronics; strain measurement; transmission electron microscopy; 45 nm; MOSFET; atomic scale lattice strain measurement; chemical bonding; metal-oxide-semiconductor field effect transistor; nanoelectronic devices; transmission electron microscopy; wafer production; Atomic measurements; Chemicals; FETs; Lattices; Nanoscale devices; Photonic band gap; Semiconductor devices; Strain measurement; Transmission electron microscopy; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306670
Filename
4098657
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