Title :
Atomic scale characterization for nanoelectronic devices
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
Atomic scale lattice strain measurement and chemical bonding & bandgap study are two important transmission electron microscopic (TEM) applications for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45nm metal-oxide-semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed
Keywords :
MOSFET; bonds (chemical); nanoelectronics; strain measurement; transmission electron microscopy; 45 nm; MOSFET; atomic scale lattice strain measurement; chemical bonding; metal-oxide-semiconductor field effect transistor; nanoelectronic devices; transmission electron microscopy; wafer production; Atomic measurements; Chemicals; FETs; Lattices; Nanoscale devices; Photonic band gap; Semiconductor devices; Strain measurement; Transmission electron microscopy; Wafer bonding;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306670
