High power integration for RF infrastructure power amplifiers

Author

Jones, Jeff

Author_Institution

RF Div., Freescale Semicond. Inc., Tempe, AZ

fYear

2009

fDate

18-22 Jan. 2009

Firstpage

534

Lastpage

537

Abstract

This paper presents techniques used in integration for high-power RF semiconductor products and their use in wireless infrastructure power amplifiers. Integrated single and multi-stage devices are discussed, as well as PA architecture comparisons and benefits for class AB, and high efficiency amplifiers. Manufacturing advantages and disadvantages of traditional discrete, versus various types of integrated semiconductor devices are compared for both ground-based and tower-mounted amplifier applications.

Keywords

MOS integrated circuits; integrated circuit design; power amplifiers; power integrated circuits; power semiconductor devices; radiofrequency amplifiers; radiofrequency integrated circuits; LDMOS RFIC; PA architecture; RF infrastructure power amplifier; high power integration; high-power RF semiconductor; integrated multistage device; integrated single-stage device; wireless infrastructure power amplifier; Capacitors; High power amplifiers; Integrated circuit packaging; Integrated circuit technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Semiconductor optical amplifiers; Wire; LDMOS; Power amplifiers; integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2009. RWS '09. IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2698-0

Electronic_ISBN

978-1-4244-2699-7

Type

conf

DOI

10.1109/RWS.2009.4957406

Filename

4957406