Title :
A 1-W, 800-MHz, switch-mode CMOS RF power amplifier using an on-chip transformer with double primary sides
Author :
Shim, Sunbo ; Hong, Songcheol
Author_Institution :
Sch. of EECS, Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Abstract :
A fully-integrated switch-mode CMOS RF power amplifier is implemented in 0.18-mum process based on the concept of the distributed active transformer. In order to enhance the output power level by increasing the coupling factor of the transformer, the double primary parts are placed at both sides of the secondary part of the transformer, thereby reducing the effective resistance of the transmission-line. The designed power amplifier has more than 30-dBm of output power in GSM 850 band.
Keywords :
CMOS integrated circuits; high-frequency transmission lines; impedance convertors; microwave power amplifiers; GSM 850 band; distributed active transformer; double primary sides; frequency 800 MHz; on-chip transformer; power 1 W; size 0.18 mum; switch-mode CMOS RF power amplifier; transmission line; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switch-mode CMOS power amplifier; distributed active transformer (DAT); global system for mobile telecommunication (GSM);
Conference_Titel :
Radio and Wireless Symposium, 2009. RWS '09. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2698-0
Electronic_ISBN :
978-1-4244-2699-7
DOI :
10.1109/RWS.2009.4957407
