Title :
30 GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT
Author :
Rasmi, Amiza ; Azmi, I.M. ; Rahim, Ahmad Ismat Abdul ; Heng-Tung Hsu ; Chang, Edward Yi
Author_Institution :
TM R&D Sdn Bhd, Lingkaran Teknokrat Timur, Cyberjaya, Malaysia
Abstract :
Summary form only given. This paper presents the design and simulated performance of millimeter-wave monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). A two stage LNA has been designed and developed using a 0.15um commercial GaAs pseudomorphic HEMT technology. The simulated data shows 2.21dB of noise figure with an associated gain of 13.14dB at the frequency operation of 30 GHz. At 3.0V of drain voltage, VDS and -0.20V of gate voltage, VGS; this LNA consume 56mA of total current and achieves 16.10dBm of output P1dB. The layout size is 4.1 × 1.3 mm2.
Keywords :
MMIC amplifiers; gallium arsenide; low noise amplifiers; wide band gap semiconductors; 2-stage MMIC low noise amplifier; current 56 mA; data simulation; drain voltage; frequency 30 GHz; gate voltage; millimeter-wave monolithic microwave integrated circuit low noise amplifier; pseudomorphic HEMT technology; voltage -0.20 V; voltage 3 V; Educational institutions; Gallium arsenide; Low-noise amplifiers; MMICs; PHEMTs; Technological innovation;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628044
