Title :
Determination of Metallic Impurities in Various Semiconductor Chemicals by Using ORS Quadruploe ICP-MS
Author :
Yeh, M.P. ; Ho, C.S. ; Hong, C.L. ; Lin, T.C.
Author_Institution :
ProMOS Technol. Inc., Taichung
Abstract :
This paper describes the determination of metallic impurities in various semiconductor chemicals by direct sample introduction and ORS (octopole reaction system) quadrupole ICP-MS analysis. Spike recovery test of seven elements (Na, Al, Ca, Cr, Fe, Ni, and Cu) are performed for nine chemicals (NH4OH, TMAH, SC-1, HCl, HNO3, H2O2, H3PO4, HF, and BHF). Our results shows that the spike recovery rates of seven elements are all within the range of 75 ~ 110% with 100ppt spiked solution. It is worthy to mention a better spike recovery is found for the H2O2 sample prepared in 1% HNO3, instead of DIW. All the elements´ DL and BEC are less than 10 ppt in 1% HNO3 matrix solution
Keywords :
aluminium; calcium; chromium; copper; etching; impurities; iron; mass spectroscopic chemical analysis; nickel; organic compounds; semiconductor device manufacture; sodium; surface cleaning; surface contamination; Al; Ca; Cr; Cu; Fe; Na; Ni; ORS quadrupole ICP-MS analysis; SC-1; TMAH; direct sample introduction; metallic impurities; octopole reaction system; semiconductor chemicals; spike recovery test; Calibration; Chemical analysis; Chemical elements; Hydrogen; Interference; Plasma applications; Plasma chemistry; Plasma devices; Semiconductor impurities; Testing;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306674