Capacitance-Voltage characterization of InAsySb1−y XOI FET

Author

Alam, Md Nur Kutubul ; Islam, Md Shariful ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Self consistent quasi-static capacitance-voltage (CV) characteristics of InAsSb XOI nFET are investigated. Well known SILVACO´s ATLAS device simulation package is used to solve one dimensional coupled Schrödinger-Poisson equation by correlating Fermi function and carrier concentration with growth co-ordinates. It is found that device operating temperature and different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness have strong influence on CV profiles and threshold voltage. It is also reported that there is a limit of doping concentration and channel thickness to ensure enhancement mode operation.

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; arsenic compounds; capacitance; carrier density; doping profiles; field effect transistors; indium compounds; semiconductor device models; semiconductor doping; Fermi function; InAs_ySb_1-y; Silvaco ATLAS device simulation package; XOI FET; carrier concentration; channel composition; channel thickness; device operating temperature; doping concentration; gate oxide; one dimensional coupled Schrodinger-Poisson equation; oxide thickness; self consistent quasistatic capacitance-voltage characteristics; threshold voltage; Capacitance; Capacitance-voltage characteristics; Doping; Field effect transistors; Logic gates; Silicon; Temperature; CV characteristics; InAsSb nFET XOI; Self-consistent analysis; quasi-static CV;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628046

Filename

6628046