Title :
Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET
Author :
Kutubul Alam, Md Nur ; Islam, Md Shariful ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
In1-xGaxSb XOI nFET is proposed and its capacitance-voltage (CV) characteristics are investigated. One dimensional coupled Schrödinger-Poisson equation is solved to calculate charge and hence to the capacitance. Well known SILVACO´s ATLAS device simulation package is used to carry out the simulation. It is found that the CV characteristic as well as the threshold voltage of the proposed device depend on different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness, and operating temperature. Doping dependent threshold voltage shift is related with maximum allowable doping level, and which is also important for understanding enhancement mode operation.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; doping; field effect transistors; gallium compounds; indium compounds; In1-xGaxSb; SILVACO ATLAS device simulation package; XOI nFET; capacitance; capacitance-voltage characteristics; channel composition; channel thickness; doping concentration; doping level; enhancement mode operation; gate oxide; one-dimensional coupled Schrodinger-Poisson equation; operating temperature; oxide thickness; self-consistent quasistatic C-V characteristics; threshold voltage; Capacitance; Capacitance-voltage characteristics; Doping; Field effect transistors; Logic gates; Silicon; Temperature; CV characteristics; InGaSb XOI nFET; quasi-static CV; self-consistent analysis;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628047
