Title :
Fabrication and characterization of quantum Hall devices for the resistance standard at CMS
Author :
Chen, K.Y. ; Huang, Chih-Ying ; Liang, C.T. ; Hang, D.R. ; Chang, Y.H. ; Chih-Ying Huang ; Shih-Fang Chen ; Li-Hung Lin ; Hsiao, J.C. ; Lin, Li-Hung ; Cheng, K.A.
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We fabricated AlGaAs/GaAs heterostructure-based quantum Hall devices for the resistance standard at Center for Measurement Standards (CMS). The measurements using a Direct Current Comparator (DCC) show the consistency between the plateaus of v=2 and 4 at the temperature T=2 K, where v is the filling factor. On the other hand, the plateaus of higher filling factors may be susceptible to the reduced localization strength, under which the semiclassical effects can be important. The coexistence of localization-induced gaps and semiclassical transport is discussed.
Keywords :
Hall effect devices; current comparators; electric current measurement; measurement standards; quantum Hall effect; CMS; center for measurement standard; direct current comparator; fabrication; filling factor; localization-induced gaps; quantum Hall devices; resistance standard; semiclassical effects; Collision mitigation; Current measurement; Electrical resistance measurement; Fabrication; Filling; Gallium arsenide; Materials science and technology; Measurement standards; Physics; Temperature;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544175
