DocumentCode :
3474907
Title :
2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology
Author :
Xin Yang ; Kangyang Xu ; Wei Wang ; Uchida, Yasuo ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Waseda Univ., Kitakyushu, Japan
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.
Keywords :
CMOS integrated circuits; MOS capacitors; amplifiers; inductors; low-power electronics; phase noise; varactors; voltage-controlled oscillators; CMOS technology; MOS varactors; buffer amplifier; cross-coupled nMOSFET pair; frequency 2 GHz; phase noise; size 130 nm; spiral inductor; ultra-low-voltage LC-VCO IC; voltage 0.5 V; Integrated circuits; MOSFET circuits; Phase noise; Power generation; Size measurement; LC-VCO; Low Phase Noise; Ultra-Low-Power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628052
Filename :
6628052
Link To Document :
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