Unclamped inductive switching stress failure mechanism of LDMOS

Author

Kumar, Vijay M. P. ; Shreyas, Grama Srinath ; Khaund, Chinmoy ; Shao-Ming Yang ; Sheu, G.

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

The failure mechanism of Unclamped Inductive Switching (UIS) stress on Laterally Diffused MOS (LDMOS) device has been investigated first time. Failure in LDMOS has been compared with the Vertical DMOS. Technology-computer-aided-design (TCAD) simulations and analytical solution reveal that the diffusion current dominates the avalanche current at the drain side to reduce the device stability which depends on the negative value of partial differentiation of diffusion current density with respect to temperature. It is observed that the variation in drain dose affects the diffusion current in turn varying the stability of the device.

Keywords

MIS devices; current density; failure analysis; technology CAD (electronics); LDMOS device; LDMOS failure; TCAD simulations; avalanche current; device stability; diffusion current density; drain dose affects; laterally diffused MOS device; partial differentiation; technology-computer-aided design simulations; unclamped inductive switching stress failure mechanism; vertical DMOS; Numerical models; Stability analysis; Switches; LDMOS; UIS; drain doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628057

Filename

6628057