DocumentCode :
3475070
Title :
Study of porous silicon substrate for the integration of radiofrequency monolithic circuits
Author :
Capelle, M. ; Billoue, J. ; Gautier, G. ; Poveda, P.
Author_Institution :
GREMAN, Univ. Francois Rabelais, Tours, France
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
The silicon/porous silicon hybrid substrate is an interesting candidate for the integration of radiofrequency circuits. Thus, passive components can be integrated on the insulating porous silicon regions closed to the active devices integrated on silicon. Regarding to silicon, the hybrid substrate allows the improvment of RF circuits performances. To demonstrate it, coplanar waveguides and inductors have been integrated on glass, silicon and localised porous silicon substrates. Characterisation results show that substrate losses are reduced with the porous silicon substrate.
Keywords :
coplanar waveguides; elemental semiconductors; inductors; microwave circuits; porous semiconductors; silicon; RF circuits; Si; active devices; coplanar waveguides; inductors; passive components; porous silicon hybrid substrate; radiofrequency monolithic circuits; substrate losses; Radio frequency; Silicon; Substrates; coplanar waveguide; inductor; porous silicon; radiofrequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628060
Filename :
6628060
Link To Document :
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