• DocumentCode
    3475082
  • Title

    A low-voltage high-efficiency voltage doubler for thermoelectric energy harvesting

  • Author

    Jungmoon Kim ; Mok, Philip K. T. ; Chulwoo Kim ; Ying Khai Teh

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents a low-voltage high-efficiency voltage doubler for thermoelectric energy harvesting. A negative charge pump is used to reduce on-resistance of PMOSFET load switches. Additional circuitry for achieving high efficiency just requires small chip-area and low-cost. The voltage doubler is implemented in 0.13-μm 1.2V CMOS process. The proposed doubler improves the low-voltage power efficiency by 17%, compared to conventional voltage doublers. Moreover, the proposed doubler can support wider load range. The maximum power efficiency reaches 52% at the input voltage of 0.2V.
  • Keywords
    CMOS integrated circuits; energy harvesting; field effect transistor switches; thermoelectric conversion; CMOS process; PMOSFET load switches; circuitry; low-voltage high-efficiency voltage doubler; low-voltage power efficiency; maximum power efficiency; negative charge pump; on-resistance reduction; thermoelectric energy harvesting; voltage 0.2 V; voltage 1.2 V; Charge pumps; Clocks; Energy harvesting; Logic gates; Manganese; Threshold voltage; Timing; Charge pump; energy harvesting; high efficiency; low voltage; negative charge pump; thermoelectric energy harvesting; voltage doubler;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628061
  • Filename
    6628061