Title :
Effect of oxygen profiles on the RS characteristics of bilayer TaOx/TaOy based RRAM
Author :
Xinyi Li ; Huaqiang Wu ; Minghao Wu ; Ning Deng ; He Qian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Stable bipolar RRAM devices were fabricated using bi-layer tantalum (Ta) oxide deposited by reactive magnetron sputtering at room temperature with asymmetric oxygen profiles. Impacts of oxygen profiles on the resistive switching characteristics were investigated through varying tantalum oxide thickness and oxygen partial pressure during tantalum oxide deposition. A preferred oxygen profile for tantalum oxide based RRAM is proposed to achieve better performance.
Keywords :
random-access storage; sputtering; tantalum compounds; RS characteristics; TaOx-TaOy; asymmetric oxygen profiles; bilayer based RRAM; bipolar RRAM devices; oxygen partial pressure; reactive magnetron sputtering; resistive switching characteristics; temperature 293 K to 298 K; Performance evaluation; Spectroscopy; Switches; RRAM; oxygen profile; tantalum oxide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628066
