DocumentCode
3475183
Title
Effect of oxygen profiles on the RS characteristics of bilayer TaOx /TaOy based RRAM
Author
Xinyi Li ; Huaqiang Wu ; Minghao Wu ; Ning Deng ; He Qian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
Stable bipolar RRAM devices were fabricated using bi-layer tantalum (Ta) oxide deposited by reactive magnetron sputtering at room temperature with asymmetric oxygen profiles. Impacts of oxygen profiles on the resistive switching characteristics were investigated through varying tantalum oxide thickness and oxygen partial pressure during tantalum oxide deposition. A preferred oxygen profile for tantalum oxide based RRAM is proposed to achieve better performance.
Keywords
random-access storage; sputtering; tantalum compounds; RS characteristics; TaOx-TaOy; asymmetric oxygen profiles; bilayer based RRAM; bipolar RRAM devices; oxygen partial pressure; reactive magnetron sputtering; resistive switching characteristics; temperature 293 K to 298 K; Performance evaluation; Spectroscopy; Switches; RRAM; oxygen profile; tantalum oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628066
Filename
6628066
Link To Document