• DocumentCode
    3475204
  • Title

    Bias Stress Induced Conduction Mechanism Evolution in Silica Based Inter-Metal Dielectrics

  • Author

    Li, Yunlong ; Groeseneken, Guido ; Maex, K. ; Tokei, Z.

  • Author_Institution
    MEC, Leuvenb
  • fYear
    2006
  • fDate
    Oct. 16 2006-Sept. 19 2006
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    The real-time conduction mechanism evolution during bias stress of three silica based inter-metal dielectrics in Cu damascene structures was investigated. Capacitance measurements at 1 MHz and I-V measurements were intermittently inserted into the process of bias stress to monitor the conduction mechanism evolution with time. All experiments show that the capacitance is constant and the I-V curve slope decreases with bias stress and converges to the half of the initial value. Based on these findings, we conclude that the conduction mechanism changes from a normal Frenkel-Poole emission to an "abnormal" Frenkel-Poole emission with bias stress
  • Keywords
    Poole-Frenkel effect; dielectric materials; Cu damascene structures; Frenkel-Poole emission; bias stress induced conduction mechanism; capacitance measurements; intermetal dielectrics; Capacitance measurement; Chemical vapor deposition; Frequency; Glass; High-K gate dielectrics; Monitoring; Silicon compounds; Stress measurement; Testing; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305203
  • Filename
    4098680