DocumentCode :
3475204
Title :
Bias Stress Induced Conduction Mechanism Evolution in Silica Based Inter-Metal Dielectrics
Author :
Li, Yunlong ; Groeseneken, Guido ; Maex, K. ; Tokei, Z.
Author_Institution :
MEC, Leuvenb
fYear :
2006
fDate :
Oct. 16 2006-Sept. 19 2006
Firstpage :
20
Lastpage :
23
Abstract :
The real-time conduction mechanism evolution during bias stress of three silica based inter-metal dielectrics in Cu damascene structures was investigated. Capacitance measurements at 1 MHz and I-V measurements were intermittently inserted into the process of bias stress to monitor the conduction mechanism evolution with time. All experiments show that the capacitance is constant and the I-V curve slope decreases with bias stress and converges to the half of the initial value. Based on these findings, we conclude that the conduction mechanism changes from a normal Frenkel-Poole emission to an "abnormal" Frenkel-Poole emission with bias stress
Keywords :
Poole-Frenkel effect; dielectric materials; Cu damascene structures; Frenkel-Poole emission; bias stress induced conduction mechanism; capacitance measurements; intermetal dielectrics; Capacitance measurement; Chemical vapor deposition; Frequency; Glass; High-K gate dielectrics; Monitoring; Silicon compounds; Stress measurement; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2006.305203
Filename :
4098680
Link To Document :
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