• DocumentCode
    3475207
  • Title

    Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer

  • Author

    Kawata, Shigeo ; Kobayashi, Kaoru ; Fujii, Hiromitsu ; Hino, I. ; Gowya, Akiko ; Hotta, Hitoshi ; Suzuki, Takumi

  • Author_Institution
    Opto-Electronics Research Laboratories. NEC Corporation
  • fYear
    1988
  • fDate
    Aug. 29 1988-Sept. 1 1988
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    (AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.
  • Keywords
    laser transitions; semiconductor junction lasers; 646 nm; 660 nm; 667 nm; AlGaInP; CW operation; GaInAsP-AlGaAs; III-V semiconductors; InGaP-InGaAlP; laser diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
  • Conference_Location
    Boston, MA, USA
  • Type

    conf

  • DOI
    10.1109/SLCON.1988.26158
  • Filename
    26158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475207