Title :
Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer
Author :
Kawata, Shigeo ; Kobayashi, Kaoru ; Fujii, Hiromitsu ; Hino, I. ; Gowya, Akiko ; Hotta, Hitoshi ; Suzuki, Takumi
Author_Institution :
Opto-Electronics Research Laboratories. NEC Corporation
fDate :
Aug. 29 1988-Sept. 1 1988
Abstract :
(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.
Keywords :
laser transitions; semiconductor junction lasers; 646 nm; 660 nm; 667 nm; AlGaInP; CW operation; GaInAsP-AlGaAs; III-V semiconductors; InGaP-InGaAlP; laser diodes;
Conference_Titel :
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/SLCON.1988.26158
