Title :
Resisitive switching variability study on 1T1R AlOx/WOx-based RRAM array
Author :
Bin Jiao ; Ning Deng ; Jie Yu ; Yue Bai ; Minghao Wu ; Ye Zhang ; He Qian ; Huaqiang Wu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.
Keywords :
CMOS memory circuits; MOSFET; aluminium compounds; power consumption; random-access storage; tungsten compounds; 1T1R-based RRAM array; AlOx-WOx; array size; bilayer-based RRAM cells; commercial CMOS foundry; forming voltage; memory devices; parameters variations; power consumption; resisitive switching variability; resistive random access memories; switching process; transistor size; Arrays; Switches; AlOx; RRAM; WOx; variation;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628071
