High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer

Author

Chang-Ju Lee ; Hyeon-Gu Cha ; Chul-Ho Won ; Jung-Hee Lee ; Sung-Ho Hahm

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al₂O₃ and SiO₂ were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al₂O₃ layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al₂O₃ layer at the high bias conditions.

Keywords

III-V semiconductors; MIS devices; alumina; aluminium compounds; current density; dark conductivity; gallium compounds; leakage currents; photodetectors; silicon compounds; thin film sensors; ultraviolet detectors; wide band gap semiconductors; AlGaN-GaN-Al₂O₃; AlGaN-GaN-SiO₂; UV-visible rejection ratio; bias condition; dark current density reduction; dual wavelength detecting MISIM UV sensor; effective layer material; leakage current; metal-insulator-semiconductor-insulator-metal; thin layer; tunneling insulator layer; wavelength 320 nm; wavelength 365 nm; Atomic beams; Atomic layer deposition; Decision support systems; Dual band; Gallium nitride; Tunneling; AlGaN/GaN; Dual-wavelength detection; Metal-semiconductor-metal; Tunneling insulator; UV sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628072

Filename

6628072