• DocumentCode
    347530
  • Title

    Investigation of a low cost solder bumping technique for flip-chip interconnection

  • Author

    Hutt, David A. ; Rhodes, Daniel G. ; Conway, Paul P. ; Mannan, Samjid H. ; Whalley, David C. ; Holmes, Andrew S.

  • Author_Institution
    Dept. of Manuf. Eng., Loughborough Univ., UK
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    334
  • Lastpage
    342
  • Abstract
    As the demand for flip-chip products increases, the need for high volume, low cost manufacturing processes also increases. All technology roadmaps point towards higher performance products based on finer pitch, high I/O count components. These requirements will push existing low cost solder bumping technologies to their practical limits and future products may have to use higher cost, lower throughput production strategies to achieve the requisite feature sizes. Currently, solder paste printing is the solder deposition method of choice for device pitches down to 150-200 μm; however, limitations in print quality and solder paste volume mean that this technology is not likely to move significantly below this pitch. The attractiveness of solder paste printing as a deposition technique due to its low cost and established infrastructure mean that methods for extending its application beyond 150 μm pitch would be desirable. This paper describes experiments conducted on carriers made from silicon for bumping of die using solder paste. An anisotropic etching process was used to generate pockets in the silicon surface into which solder paste was printed. Die were then placed against the carrier and reflowed to transfer the solder directly to the bond pads. An assessment was carried out of the potential application and limitations of this technique for device pitches at 225 and 127 μm. This was based on experimental observations and model calculations of the efficiency with which the Si carrier apertures could be filled with solder paste
  • Keywords
    etching; fine-pitch technology; flip-chip devices; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; reflow soldering; 127 micron; 150 to 200 micron; 225 micron; I/O count; Si; Si carrier aperture filling; Si carriers; anisotropic etching process; bond pads; component I/O count; component pitch; device pitch; die solder paste bumping; feature sizes; flip-chip interconnection; flip-chip products; infrastructure; low cost solder bumping technique; manufacturing processes; print quality; production strategies; reflow solder transfer; silicon surface pockets; solder bumping technique; solder bumping technologies; solder deposition method; solder paste; solder paste printing; solder paste volume; technology roadmaps; throughput; Anisotropic magnetoresistance; Apertures; Bonding; Costs; Etching; Manufacturing processes; Printing; Production; Silicon; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Manufacturing Technology Symposium, 1999. Twenty-Fourth IEEE/CPMT
  • Conference_Location
    Austin, TX
  • ISSN
    1089-8190
  • Print_ISBN
    0-7803-5502-4
  • Type

    conf

  • DOI
    10.1109/IEMT.1999.804842
  • Filename
    804842