S band broadband RF LDMOS with excellent performance

In this paper, RF LDMOS devices with gain of 16.5dB, high efficiency (~60%) and high power density (1.26W/mm) at 2.5 GHz is demonstrated. The basic device structure is described and the load pull test setup was put up to evaluate its RF performance. Moreover, the Hot Carrier Injection (HCI) issue is suppressed to a negligible level (less than 5% over the extrapolated 20 years). The broadband property is investigated by characterizing the device´s RF performance at 1GHz and also at a range among 2.3 to 2.5 GHz. The transducer gain and efficiency are greatly improved which is consistent with trend indicated by the small signal S parameter test result. The RF test results show us a broadband S band RF LDMOS transistor with excellent performance.