S band broadband RF LDMOS with excellent performance

Author

Ting Yu ; Zhiqing Qiu

Author_Institution

Inst. of Semicond., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

3

Abstract

In this paper, RF LDMOS devices with gain of 16.5dB, high efficiency (~60%) and high power density (1.26W/mm) at 2.5 GHz is demonstrated. The basic device structure is described and the load pull test setup was put up to evaluate its RF performance. Moreover, the Hot Carrier Injection (HCI) issue is suppressed to a negligible level (less than 5% over the extrapolated 20 years). The broadband property is investigated by characterizing the device´s RF performance at 1GHz and also at a range among 2.3 to 2.5 GHz. The transducer gain and efficiency are greatly improved which is consistent with trend indicated by the small signal S parameter test result. The RF test results show us a broadband S band RF LDMOS transistor with excellent performance.

Keywords

MOSFET; S-parameters; UHF devices; broadband networks; charge injection; hot carriers; semiconductor device testing; transducers; HCI issue; RF performance; RF test; S band RF LDMOS transistor; S band broadband RF LDMOS; S parameter test; broadband property; frequency 1 GHz; frequency 2.3 GHz to 2.5 GHz; high power density; hot carrier injection issue; load pull test setup; transducer gain; Interpolation; Radio frequency; Broadband; Efficiency; Output power; RF LDMOS; S band; Transducer gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628078

Filename

6628078