Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs

In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device´s characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive to substrate back bias. And we found that low substrate dose SOI device which with lower impact ionization shows better device´s reliability than the high substrate dose one does.