Title :
Flash Oxide Scalability Model and Impact of Program/Erase Method
Author :
Haggag, A. ; Kuhn, P. ; Ingersoll, P. ; Li, Chi-Nan ; Harp, T. ; Hoefler, A. ; Burnett, D. ; Baker, K. ; Chang, Ko-Min
Author_Institution :
Freescale Semicond. Inc., Austin, TX
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
We discuss flash oxide scalability model of various program/erase methods within the constraint of high performance (fast program/erase times) and high reliability (data retention). We show that HCI programming with FN channel erase (HCI/CE) offers the best scalable solution compared to other common methods, HCI programming with FN edge erase (HCI/EE) and uniform channel FN program erase (UCPE)
Keywords :
flash memories; reliability; FN channel erase; FN edge erase; HCI programming; data retention; flash oxide scalability model; program/erase method; uniform channel FN program erase; Anodes; Electron traps; Human computer interaction; Impact ionization; Polarization; Scalability; Semiconductor device reliability; Statistical distributions; Stress; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305214
