Title :
Field effect diode memory cell: Physics and design
Author :
Badwan, Ahmad Z. ; Chbili, Zakariae ; Yang Yang ; Qiliang Li ; Ioannou, Dimitris E. ; Salman, Adnan Ahmed
Author_Institution :
ECE Dept., George Mason Univ., Fairfax, VA, USA
Abstract :
A dynamic memory cell (DRAM) based on the Field-Effect-Diode (FED) is presented, and with the help of the underlying device physics its operation is explained and guidelines for its design are presented. This cell is characterized by fast operation speed, wide read 0/1 margin, long retention time and it is compatible with CMOS technology.
Keywords :
CMOS digital integrated circuits; field effect memory circuits; physics; semiconductor diodes; 0-1 margin; CMOS technology; DRAM; FED; device physics; dynamic memory cell; field effect diode memory cell; operation speed; retention time; Anodes; Films; Logic gates; Dynamic Memory Cell; Field Effect Diode; Silicon on Insulator;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628083
