DocumentCode :
3475497
Title :
A feedback-voltage-sensing translator for floating buck DC-DC converters
Author :
Zhihua Ning ; Lenian He ; Zhicheng Hu ; Ge Jin ; Wai Tung Ng
Author_Institution :
Inst. of Very Large Scale Integrated Circuits, Zhejiang Univ., Hangzhou, China
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
A feedback-voltage-sensing translator for floating buck DC-DC converter is designed for CSMC´s 0.5 μm 60 V BCD process. The proposed circuit utilizes one NPN, one PNP and a resistor to translate a Vin-referenced (input voltage as the reference, instead of GND) feedback voltage to a current, which is then translated to a ground-referenced voltage with another two bipolar transistors and one resistor. High precision translation is accomplished based on the equivalent base-emitter voltages of the bipolar transistors. Simulation results show that, for a Vin-referenced feedback voltage of Vfb = Vin - Vn, the proposed translator generates a ground-referenced voltage of Vn with a variation of only 0.6 mV over a wide range of Vin from 18 to 60 V. The translator also achieves a low temperature coefficient of 6.9 ppm/°C from -40 to 125 °C. Additionally, the noise of this translator is only 3.46 μVrms from 0.1 to 10 Hz and the PSR is -98 dB @ DC. The translator is verified via Spectre simulation in a floating buck converter.
Keywords :
DC-DC power convertors; bipolar transistors; feedback; resistors; BCD process; CSMC; High precision translation; NPN; PNP; Spectre simulation; Vin-referenced feedback voltage; bipolar transistors; equivalent base-emitter voltages; feedback voltage; feedback-voltage-sensing translator; floating buck converter; floating buck dc-dc converters; frequency 0.1 Hz to 10 Hz; ground-referenced voltage; ground-referenced voltage bipolar transistors; resistor; temperature -40 C to 125 C; temperature coefficient; voltage 0.6 mV; voltage 18 V to 60 V; Temperature distribution; DC-DC converter; voltage sensing; voltage translator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628084
Filename :
6628084
Link To Document :
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