Title :
Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures
Author :
Lau, W.S. ; Wong, O.Y. ; Wong, Hang
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors.
Keywords :
Poole-Frenkel effect; Schottky effect; capacitors; hafnium compounds; high-k dielectric thin films; leakage currents; HfO2; Schottky emission; hafnium oxide capacitors; high-k dielectric capacitor structures; leakage current; unified Schottky-Poole-Frenkel theory; Capacitors; high-k capacitors; unified theory;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628085
