Title :
NiSi Polysilicon Fuse Reliability in 65nm Logic CMOS Technology
Author :
Ang, Boon ; Tumakha, Sergey ; Im, Jay ; Paak, Sunhom
Author_Institution :
Xilinx Inc., San Jose, CA
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65nm logic CMOS technology were studied. Under optimal programming conditions, high post-program resistance can be achieved. These well programmed fuses showed good data retention, capable of meeting the operating lifetime requirement of most applications
Keywords :
CMOS logic circuits; circuit reliability; nickel compounds; programmable circuits; 65 nm; NiSi; NiSi polysilicon fuse reliability; data retention; logic CMOS technology; optimal programming conditions; post-program resistance; programming characteristics; Anodes; CMOS logic circuits; CMOS technology; Cathodes; Electric resistance; Electromigration; Fuses; Logic programming; Silicides; Voltage; NiSi; OTP; data retention; efuse; electromigration; fuse;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305218
