Title :
Fast productive WLR characterisation methods of plasma induced damage of thin and thick MOS gate oxides
Author :
Martin, Andreas ; Sior, C. ; Schlunder, Christian
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
The main goal of this work is to present a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors
Keywords :
MOSFET; plasma applications; MOS transistors; WLR characterisation methods; plasma induced damage; thick MOS gate oxides; thin MOS gate oxides; Antenna measurements; Automatic testing; Breakdown voltage; CMOS logic circuits; CMOS technology; Degradation; Logic testing; MOSFETs; Plasma materials processing; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305220
