• DocumentCode
    3475589
  • Title

    Fast productive WLR characterisation methods of plasma induced damage of thin and thick MOS gate oxides

  • Author

    Martin, Andreas ; Sior, C. ; Schlunder, Christian

  • fYear
    2006
  • fDate
    Oct. 16 2006-Sept. 19 2006
  • Firstpage
    98
  • Lastpage
    104
  • Abstract
    The main goal of this work is to present a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors
  • Keywords
    MOSFET; plasma applications; MOS transistors; WLR characterisation methods; plasma induced damage; thick MOS gate oxides; thin MOS gate oxides; Antenna measurements; Automatic testing; Breakdown voltage; CMOS logic circuits; CMOS technology; Degradation; Logic testing; MOSFETs; Plasma materials processing; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305220
  • Filename
    4098697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475589