• DocumentCode
    3475632
  • Title

    A simple leakage current model for polycrystalline silicon nanowire thin-film transistors

  • Author

    Hongyu He ; Jin He ; Wanling Deng ; Hao Wang ; Yue Hu ; Xiaoan Zhu ; Xueren Zheng

  • Author_Institution
    Shenzhen SOC Key Lab., Peking Univ., Shenzhen, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
  • Keywords
    elemental semiconductors; leakage currents; nanowires; silicon; thin film transistors; Si; leakage current expression; leakage current model; polycrystalline silicon nanowire thin-film transistors; thermal field emission mechanism; Data models; Educational institutions; Leakage currents; Semiconductor device modeling; Silicon; Transistors; Thin-film transistor (TFT); leakage current; nanowire; polycrystalline silicon (poly-Si); thermal field emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628090
  • Filename
    6628090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475632