Title :
New Insight on the Origin of Stress Induced Leakage Current for SIO2/HFO2 Dielectric Stacks
Author :
Rafik, M. ; Ribes, G. ; Roy, D. ; Kalpat, S. ; Ghibaudo, G.
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
In this paper, stress induced leakage current under positive gate voltage is investigated. It turns out that it is caused by bulk defects that are also responsible for breakdown. Moreover, it appears that depending on the gate voltage, erroneous estimation could be made and could affect the conclusions on the reliability
Keywords :
dielectric materials; electric breakdown; hafnium compounds; leakage currents; silicon compounds; HfO2; HfO2 dielectric stacks; SiO2; SiO2 dielectric stacks; positive gate voltage; stress induced leakage current; Breakdown voltage; Dielectrics; Electric breakdown; Electron traps; Gate leakage; Hafnium oxide; Leakage current; Stress measurement; Telephony; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305223
