DocumentCode
3475694
Title
Fast and slow charge trapping/detrapping processes in high-k nMOSFETs
Author
Heh, Dawei ; Choi, Rino ; Young, Chadwin D. ; Bersuker, Gennadi
Author_Institution
SEMATECH, Austin, TX
fYear
2006
fDate
Oct. 16 2006-Sept. 19 2006
Firstpage
120
Lastpage
124
Abstract
A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time
Keywords
MOSFET; dielectric devices; dielectric relaxation; charge detrapping processes; charge trapping processes; high-k nMOSFET; relaxation effects; single pulse technique; threshold voltage; trap charging mechanisms; trap discharging mechanisms; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MOSFETs; Monitoring; Pulse measurements; Stress measurement; Temperature sensors; Threshold voltage; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
1-4244-0296-4
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2006.305224
Filename
4098701
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